GWT30V60DF

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D²PAK TAB 3 2 1 TO-220 TAB 3 2 1 TO-247 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2, TAB) Features Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(...