IGBT
STGF100N30 STGP100N30, STGW100N30
90 A - 330 V - fast IGBT
Features
■ Optimized for sustain and energy recovery circu...
Description
STGF100N30 STGP100N30, STGW100N30
90 A - 330 V - fast IGBT
Features
■ Optimized for sustain and energy recovery circuits in PDP applications.
■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @
TC = 25 °C (see Table 2)
3 2 1
TO-220FP
3 2 1
TO-247
■ Very low-on voltage drop (VCE(sat)) and energy
per pulse for improved panel efficiency
)■ High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.
3 2 1
TO-220
Figure 1. Internal schematic diagram
lete Product(s) - ObsoleteTable 1. Device summary soOrder codes
Ob STGF100N30
Marking GF100N30
Package TO-220FP
Packaging Tube
STGP100N30
GP100N30
TO-220
Tube
STGW100N30
GW100N30
TO-247
Tube
February 2009
Rev 1
1/13
www.st.com
13
Contents
Contents
STGF100N30, STGP100N30, STGW100N30
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . ....
Similar Datasheet
- GW100N30 IGBT - STMicroelectronics