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STGFW40V60DF Dataheets PDF



Part Number STGFW40V60DF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Trench gate field-stop IGBT
Datasheet STGFW40V60DF DatasheetSTGFW40V60DF Datasheet (PDF)

STGFW40V60DF, STGW40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 1 TO-3PF 3 2 1 3 2 1 TO-247 C(2, TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode G(1) E(3) NG1E3C2T Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Descripti.

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STGFW40V60DF, STGW40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 1 TO-3PF 3 2 1 3 2 1 TO-247 C(2, TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode G(1) E(3) NG1E3C2T Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW40V60DF STGW40V60DF DS9556 - Rev 12 - June 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGFW40V60DF, STGW40V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current VGE Gate-emitter voltage Continuous forward current at TC = 25 °C IF Continuous forward current at TC = 100 °C IFP(1) Pulsed forward current PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by maximum junction temperature. Value Unit TO-247 TO-3PF 600 V 80 A 40 A 160 A ±20 V 80 A 40 A 160 A 283 98.5 W 3.5 kV -55 to 150 °C -55 to 175 °C Table 2. Thermal data Symbol Parameter RthJC RthJC RthJA Thermal resistance, junction-to-case IGBT Thermal resistance, junction-to-case diode Thermal resistance, junction-to-ambient Value TO-247 0.53 1.14 50 TO-3PF 1.52 1.95 Unit °C/W °C/W °C/W DS9556 - Rev 12 page 2/19 STGFW40V60DF, STGW40V60DF Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Symbol V(BR)CES VCE(sat) VF VGE(th) ICES IGES Table 3. Static characteristics Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage Gate threshold voltage Collector cut-off current Gate-emitter leakage current Test conditions VGE = 0 V, IC = 2 mA VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 125 °C VGE = 15 V, IC = 40 A, TJ = 175 °C IF = 40 A IF = 40 A, TJ = 125 °C IF = 40 A, TJ = 175 °C VCE = VGE, IC = 1 mA VGE = 0 V, VCE = 600 V VCE = 0 V, VGE = ±20 V Min. Typ. Max. Unit 600 V 1.8 2.3 2.15 V 2.35 1.7 2.45 1.4 V 1.3 5 6 7 V 25 µA ±250 nA Symbol Cies Coes Cr.


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