Document
STGFW40V60DF, STGW40V60DF
Datasheet
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
1
TO-3PF
3 2 1
3 2 1
TO-247
C(2, TAB)
Features
• Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode
G(1) E(3)
NG1E3C2T
Applications
• Welding • Power factor correction • UPS • Solar inverters • Chargers
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status links STGFW40V60DF STGW40V60DF
DS9556 - Rev 12 - June 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STGFW40V60DF, STGW40V60DF
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C IC
Continuous collector current at TC = 100 °C
ICP(1)
Pulsed collector current
VGE
Gate-emitter voltage
Continuous forward current at TC = 25 °C IF
Continuous forward current at TC = 100 °C
IFP(1)
Pulsed forward current
PTOT
Total power dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C)
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width is limited by maximum junction temperature.
Value
Unit
TO-247
TO-3PF
600
V
80
A
40
A
160
A
±20
V
80
A
40
A
160
A
283
98.5
W
3.5
kV
-55 to 150
°C
-55 to 175
°C
Table 2. Thermal data
Symbol
Parameter
RthJC RthJC RthJA
Thermal resistance, junction-to-case IGBT Thermal resistance, junction-to-case diode Thermal resistance, junction-to-ambient
Value TO-247
0.53 1.14
50
TO-3PF 1.52 1.95
Unit
°C/W °C/W °C/W
DS9556 - Rev 12
page 2/19
STGFW40V60DF, STGW40V60DF
Electrical characteristics
2
Electrical characteristics
TJ = 25 °C unless otherwise specified
Symbol V(BR)CES
VCE(sat)
VF VGE(th)
ICES IGES
Table 3. Static characteristics
Parameter Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Forward on-voltage
Gate threshold voltage Collector cut-off current Gate-emitter leakage current
Test conditions
VGE = 0 V, IC = 2 mA
VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 125 °C VGE = 15 V, IC = 40 A, TJ = 175 °C IF = 40 A IF = 40 A, TJ = 125 °C IF = 40 A, TJ = 175 °C VCE = VGE, IC = 1 mA VGE = 0 V, VCE = 600 V VCE = 0 V, VGE = ±20 V
Min. Typ. Max. Unit
600
V
1.8 2.3
2.15
V
2.35
1.7 2.45
1.4
V
1.3
5
6
7
V
25 µA
±250 nA
Symbol Cies Coes Cr.