STH410N4F7-6AG

STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH410N4F7-2AG 40 V STH410N4F7-6AG RDS(on) max. 1.1 mΩ ID 200 A PTOT 365 W  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH410N4F7-2AG STH410N4F7-6AG Table 1: Device summary Marking Package 410N4F7 H²PAK-2 H²PAK-6 Packing Tape And Reel February 2016 DocID027734 Rev ...