N-channel Power MOSFET
STI410N4F7AG
Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package
Datasheet - pr...
Description
STI410N4F7AG
Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package
Datasheet - preliminary data
Features
TAB
Product(s)1 2 3 leteI²PAK bsoFigure 1: Internal schematic diagram ) - OD(2, TAB) Product(sG(1)
Order code STI410N4F7AG
VDS 40 V
RDS(on) max.
1.8 mΩ
ID 180 A
PTOT 365 W
Designed for automotive applications Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Obsolete S(3)
AM01475v1_Tab
Table 1: Device summary
Order code
Marking
Package
Packing
STI410N4F7AG
410N4F7
I²PAK
Tube
June 2016
DocID029445 Rev 1
This is preliminary ...
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