STL210N4F7AG

STL210N4F7AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL210N4F7AG V DS 40 V RDS(on) max 1.6 mΩ ID 120 A  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL210N4F7AG Table 1: Device summary Marking Package 210N4F7 PowerFLAT™ 5x6 Packaging Tape and reel January 2016 DocID028773 Rev 1 This is information on a product in full...