STF13NM60ND

STF13NM60ND Datasheet N-channel 600 V, 325 mΩ typ., 11 A FDmesh II Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_noTab Features Order code VDS at TJ max. RDS(on) max. ID STF13NM60ND 650 V 380 mΩ 11 A Fast-recovery body diode Low gate charge and input capacitance Low on-resistance RDS(on) 100% avalanche tested High dv/dt ruggedness Applications Switching applications Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Product status link STF13NM60ND Product summary Order code STF13NM60ND Marking 13NM60ND Package TO-220FP Packing Tube DS14315 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office. www.st.com STF13NM60ND Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C IDM(1)(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope dv/dt(4) MOSFET dv/dt ruggedness VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C)...