STI175N4F6AG

STI175N4F6AG Automotive-grade N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in an I²PAK package Datasheet - production data TAB 123 I²PAK Figure 1: Internal schematic diagram Features Order code VDS STI175N4F6AG 40 V RDS(on) max. 2.7 mΩ ID 120 A PTOT 190 W  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications  Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STI175N4F6AG Table 1: Device summary Marking 175N4F6 Package I²PAK Packing Tube January 2016 DocID028920 Rev 1 This is information on a product in full production. 1/12 www.st.com Contents Contents STI175N4F6AG 1 Electrical ratings .........................