STD170N4F7AG

STD170N4F7AG Automotive-grade N-channel 40 V, 2.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2) G(1) S(3) Features Order code VDS RDS(on) max. ID PTOT STD170N4F7AG 40 V 2.8 mΩ 80 A 172 W  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD170N4F7AG AM01475v1_no Tab_noZen Table 1: Device summary Marking Package 170N4F7 DPAK Packing Tape and reel December 2016 DocID030120 Rev 1 This is information on a product in full production. 1/16 www.st.com Contents Conte...