N-channel Power MOSFET
STL260N4F7
N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - prelim...
Description
STL260N4F7
N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
Features
Order code STL260N4F7
VDS 40 V
RDS(on)max 1.1 mΩ
ID 120 A
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STL260N4F7
Table 1: Device summary
Marking
Package
260N4F7
PowerFLAT™ 5x6
Packaging Tape and reel
June 2016
DocID028217 Rev 3
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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