Document
STB120N4LF6 STD120N4LF6
N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET
Features
Order codes STB120N4LF6 STD120N4LF6
VDSS 40 V 40 V
RDS(on) max 4.0 mΩ 4.0 mΩ
ID 80 A 80 A
■ Logic level drive ■ 100% avalanche tested
Application
■ Switching applications – Automotive
Description
This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3 1
DPAK
3 1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary Order codes STB120N4LF6 STD120N4LF6
Marking 120N4LF6
Packages D²PAK DPAK
Packaging Tape and reel
February 2011
Doc ID 16919 Rev 2
1/18
www.st.com
18
Contents
Contents
STB120N4LF6, STD120N4LF6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . .