STP110N55F6

STP110N55F6 N-channel 55 V, 4.5 Ω typ., 110 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220 Order code STP110N55F6 VDS 55 V RDS(on) max. ID 5.2 mΩ 110 A Low gate charge Very low on-resistance High avalanche ruggedness Applications Switching applications Figure 1. Internal schematic diagram '7$% Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. * 6 $0Y Order code STP110N55F6 Table 1. Device summary Marking Packages 110N55F6 TO-220 Packaging Tube July 2014 This is information on a product in full production. DocID019059 Rev 2 1/13 www.st.com Contents Contents STP110N55F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . ....