N-CHANNEL POWER MOSFET
STH272N6F7-6AG
Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A STripFET™ F7 Power MOSFET in H²PAK-6 package
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Description
STH272N6F7-6AG
Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A STripFET™ F7 Power MOSFET in H²PAK-6 package
Datasheet - production data
TAB 7
1
H2PAK-6 Figure 1: Internal schematic diagram
Features
Order code STH272N6F7-6AG
VDS 60 V
RDS(on) max. 1.5 mΩ
ID 180 A
Designed for automotive applications and AEC-Q101 qualified
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STH272N6F7-6AG
Table 1: Device summary
Marking
Package
272N6F7
H²PAK-6
Packing Tape and reel
March 2016
DocID029124 Rev 1
This is information on a product in full production.
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