Document
STP140N6F7
N-channel 60 V, 0.0031 Ω typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STP140N6F7
VDS 60 V
RDS(on) max. 0.0035 Ω
ID 80 A
PTOT 158 W
• Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STP140N6F7
Table 1: Device summary
Marking
Package
140N6F7
TO-220
Packing Tube
May 2015
DocID027726 Rev 2
This is information on a product in full production.
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Contents
Contents
STP140N6F7
1 Electrical ratings ....................................................