STP130N6F7

STP130N6F7 N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STP130N6F7 VDS 60 V RDS(on) max. 5.0 mΩ ID 80 A PTOT 160 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) Order code STP130N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 130N6F7 TO-220 Packing Tube July 2015 DocID027410 Rev 4 This is information on a product in full production. 1/12 www.st.com Contents Contents STP130N6F7 1 Electrical ratings ......................