STL20N6F7

STL20N6F7 N-channel 60 V, 0.0046 Ω typ., 20 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data 1 2 3 4 PowerFLAT™ 3.3x3.3 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Features Order code STL20N6F7 VDS 60 V RDS(on) max 0.0054 Ω ID 20 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) Order code STL20N6F7 1234 Marking 20N6F AM15810v1 Table 1: Device summary Package PowerFLAT™ 3.3x3.3 Packing Tape and reel June 2015 DocID027433 Rev 3 This is information on a product in full production. 1/13 www.st.co...