STS8DN6LF6AG

STS8DN6LF6AG Datasheet Automotive-grade dual N-channel 60 V, 21 mΩ typ., 8 A STripFET F6 Power MOSFET in a SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6) AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Logic level G1(2) G2(4) Applications Switching applications PTOT 3.2 W S1(1) S2(3) SC12820 Description This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS8DN6LF6AG Product summary Order code STS8DN6LF6AG Marking 8DN6LF6 Package SO-8 Packing Tape and reel DS11953 - Rev 2 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at Tamb = 25 °C ID(1) Drain current (continuous) at Tamb = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at Tamb = 25 °C (one channel active) Tstg Storage temperature range TJ Operating junction temperature range 1. When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s. 2. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter RthJA(1) Thermal resistanc...