STP110N7F6

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% * Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order code STP110N7F6 $0Y Table 1. Device summary Marking Package 110N7F6 TO-220 Packing Tube October 2016 This is information on a product in full production. DocID026836 Rev 3 1/13 www.st.com Contents Contents STP110N7F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 El...