STH110N10F7-6

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data TAB TAB 2 3 1 H2PAK-2 7 1 H2PAK-6 Figure 1: Internal schematic diagram S(2,3,4,5,6,7) Features Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH110N10F7-2 STH110N10F7-6 110N10F7 H2PAK-2 H2PAK-6 Tape and reel November 2014 DocID024027 Rev 4 This is information on a product in...