STP110N8F6

STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% * Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order code STP110N8F6 $0Y Table 1. Device summary Marking Package 110N8F6 TO-220 Packing Tube December 2014 This is information on a product in full production. DocID026831 Rev 2 1/13 www.st.com Contents Contents STP110N8F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Ele...