STH180N10F3-2

TAB 23 1 H2PAK-2 D(TAB) G(1) STH180N10F3-2 Datasheet N‑channel 100 V, 3.9 mΩ typ., 180 A STripFET F3 Power MOSFET in H²PAK‑2 package Features Order code VDS STH180N10F3-2 100 V Ultra low on-resistence 100% avalanche tested RDS(on) max. 4.5 mΩ ID 180 A Applications Switching applications Description This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2,3) NCHG1DTABS23 Product status link STH180N10F3-2 Product summary Order code STH180N10F3-2 Marking 180N10F3 Package H2PAK-2 Packing Tape and reel DS7317 - Rev 3 - March 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Derating factor dv/dt Peak diode recovery voltage slope EAS (3) Single pulse avalanche energy TJ Operating junction temperature Tstg Storage temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. Starting TJ = 25 °C, ID = 80, VDD = 50 V Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJB (1) Thermal resistance, junction-to-bo...