STP110N10F7

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDS RDS(on) max ID PTOT STF110N10F7 100 V 0.007 Ω STP110N10F7 45 A 30 W 110 A 150 W Ultra low on-resistance 100% avalanche tested Applications Switching applications Figure 1. Internal schematic diagram '7$% Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Order codes STF110N10F7 STP110N10F7 Table 1. Device summary Marking Package 110N10F7 TO-220FP TO-220 Packaging Tube July 2013 This is information on a product in full production. DocID024058 Rev 2 1/16 www.st.com 16 Contents Contents STF110N10F7, STP110N10F7 1 Electrical ratings . . . . . . . ...