STF30N10F7

STF30N10F7 N-channel 100 V, 0.02 Ω typ., 24 A STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram Features  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STF30N10F7 Table 1: Device summary Marking Package 30N10F7 TO-220FP Packing Tube September 2016 DocID029717 Rev 1 This is information on a product in full production. 1/13 www.st.com Contents Contents STF30N10F7 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics .....