N-CHANNEL POWER MOSFET
STD25N10F7, STF25N10F7, STP25N10F7
N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™
Power MOSFET in DPAK, TO...
Description
STD25N10F7, STF25N10F7, STP25N10F7
N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™
Power MOSFET in DPAK, TO-220FP and TO-220 packages
Datasheet - production data
TAB
DPAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
Figure 1. Internal schematic diagram
Features
Order codes
STD25N10F7 STF25N10F7 STP25N10F7
VDSS 100 V 100 V 100 V
RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω
ID 25 A 19 A 25 A
PTOT 40 W 25 W 50 W
1. @ VGS = 10 V
Ultra low on-resistance 100% avalanche tested
Applications
Switching applications
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Description
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These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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Order codes STD25N10F7 STF25N10F7 STP25N10F7
Table 1. Device summary
Marking
Package
25N10F7 25N10F7 25N10F7
DPAK TO-220FP
TO-220
September 2013
This is information on a product in full production.
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