STF25N10F7

STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data TAB DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Features Order codes STD25N10F7 STF25N10F7 STP25N10F7 VDSS 100 V 100 V 100 V RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω ID 25 A 19 A 25 A PTOT 40 W 25 W 50 W 1. @ VGS = 10 V Ultra low on-resistance 100% avalanche tested Applications Switching applications 'Ć7$% * Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STD25N10F7 STF25N10F7 STP25N10F7 Table 1. Device summary Marking Package 25N10F7 25N10F7 25N10F7 DPAK TO-220FP TO-220 September 2013 This is information on a product in full production. DocID...