STL30N10F7

STL30N10F7 Datasheet N-channel 100 V, 0.027 Ω typ., 8 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features PowerFLAT 5x6 Order code VDS RDS(on) max. ID STL30N10F7 100 V 0.035 Ω 8A Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness PTOT 4.8 W D(5, 6, 7, 8) 8 76 5 Applications Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL30N10F7 Product summary Order code STL30N10F7 Marking 30N10F7 Package PowerFLAT 5x6 Packing Tape and reel DS9999 - Rev 2 - November 2019 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(1)(2) Drain current (pulsed) ID(3) Drain current (continuous) at Tpcb = 25 °C ID(3) Drain current (continuous) at Tpcb = 100 °C IDM(2)(3) Drain current (pulsed) PTOT(1) Total power dissipation at TC = 25 °C PTOT(3) Total power dissipation at Tpcb = 25 °C Tstg Stora...