STL20DN10F7

STL20DN10F7 Dual N-channel 100 V, 0.059 Ω typ., 5 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data 1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Features Order code STL20DN10F7 VDS RDS(on) max 100 V 0.067 Ω ID 5A N-channel enhancement mode Lower RDS(on) x area vs previous generation 100% avalanche rated Applications Switching applications Description th This device utilizes the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STL20DN10F7 Table 1. Device summary Marking Package 20DN10F7 PowerFLAT™ 5x6 double island Packaging Tape and reel April 2014 This is information on a product in full production. DocID023935 Rev 3 1/14 www.st.com Contents Contents STL20DN10F7 1 Electrical ratings . . . . . . . . . . . . ....