STY105NM50N

STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh™ II Power MOSFET in a Max247 package Datasheet - production data Features 3 2 1 Max247 Figure 1. Internal schematic diagram ' *6 Order code STY105NM50N VDSS @TjMAX 550 V RDS(on) max < 0.022 Ω ID 110 A Max247 worldwide best RDS(on) 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Order code STY105NM50N Table 1. Device summary Marking Package 105NM50N Max247 July 2013 This is information on a product in full production. Doc ID 022226 Rev 3 Packagin...