STW56N60M2

STW56N60M2 Datasheet N-channel 600 V, 45 mΩ typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS at TJ max. STW56N60M2 650 V Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected RDS(on) max. 55 mΩ ID 52 A Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STW56N60M2 Product summary Order code STW56N60M2 Marking 56N60M2 Package TO-247 Packing Tube DS10753 - Rev 3 - August 2022 For further information contact your local STMicroelectronics sales office. www.st.com STW56N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 52 A, di/dt = 400 A/µs, VDS (peak) < V(BR)DSS, VDD = 400 ...