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STF33N60DM2

STMicroelectronics

N-CHANNEL POWER MOSFET

STF33N60DM2 N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in TO-220FP package Datasheet - production dat...


STMicroelectronics

STF33N60DM2

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Description
STF33N60DM2 N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF33N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.130 Ω ID 24 A  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) Order code STF33N60DM2 AM15572v1_no_tab Table 1: Device summary Marking 33N60DM2 Package TO-220FP Packing Tube July 2016 DocID026861 Rev 2 This is information on a p...




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