STFW24N60M2

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP, I PAKFP and TO-3PF packages Datasheet − production data Features 3 2 1 TO-220FP 123 I2PAKFP (TO-281) 1 3 2 1 TO-3PF Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes VDS @ TJmax RDS(on) max ID STF24N60M2 STFI24N60M2 650 V 0.19 Ω 18 A STFW24N60M2 Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding h...