STD18N60M6

STD18N60M6 Datasheet N-channel 600 V, 230 mΩ typ., 13 A MDmesh M6 Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD18N60M6 600 V 280 mΩ 13 A Reduced switching losses Lower RDS(on) per area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected G(1) Applications Switching applications LLC converters S(3) Boost PFC converters AM01476v1_tab Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STD18N60M6 Product summary Order code STD18N60M6 Marking 18N60M6 Package DPAK Packing Tape and reel DS12843 - Rev 3 - April 2023 For further information contact your local STMicroelectronics sales office. www.st.com STD18N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/...