N-channel Power MOSFET
STU12N60M2
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in an IPAK package
Datasheet - production data
T...
Description
STU12N60M2
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in an IPAK package
Datasheet - production data
TAB
IPAK
3 2 1
Figure 1: Internal schematic diagram
Features
Order code STU12N60M2
VDS 600 V
RDS(on) max. 0.450 Ω
ID PTOT 9 A 85 W
Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Order code STU12N60M2
Table 1: Device summary
Marking
Package
12N60M2
IPAK
Packing Tube
May 2015
DocID027901 Rev 1
This is information on a product in full production.
1/12
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Contents
Contents
STU12N60M2
1 Electrical ratings ...................
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