STL3NM60N

STL3NM60N Datasheet N-channel 600 V, 1.5 Ω typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package 123 4 876 5 567 8 PowerFLAT 3.3x3.3 HV D(5, 6, 7, 8) G(4) S(1, 2, 3) AM15810v1 Features Order code VDS RDS(on ) max. STL3NM60N 600 V 1.8 Ω 100% avalanche tested Low input capacitance and gate charge Low gate input resistance ID 2.2 A Applications Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status link STL3NM60N Product summary Order code STL3NM60N Marking 3NM60 Package PowerFLAT 3.3x3.3 HV Packing Tape and reel DS8889 - Rev 3 - May 2022 For further information contact your local STMicroelectronics sales office. www.st.com STL3NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C ID Drain current (continuous) at TA = 25 °C Drain current (continuous) at TA = 100 °C IDM (1) Drain current pulsed PTOT Total power dissipation at TA = 25 °C Total power dissipation at TC = 25 °C IAS Avalanche current, repetitive or no...