N-channel Power MOSFET
STD2NK90ZT4
Datasheet
N-channel 900 V, 4.7 Ω typ., 2.1 A SuperMESH Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TA...
Description
STD2NK90ZT4
Datasheet
N-channel 900 V, 4.7 Ω typ., 2.1 A SuperMESH Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
STD2NK90ZT4
900 V
100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected
RDS(on) max. 6.5 Ω
ID 2.1 A
Applications
Switching applications
Description
AM01476v1_tab
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Product status link STD2NK90ZT4
Product summary
Order code
STD2NK90ZT4
Marking
D2NK90Z
Package
DPAK
Packing
Tape and reel
DS4030 - Rev 6 - October 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STD2NK90ZT4
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
ESD
Gate-source, human body model (R = 1.5 kΩ, C = 100 pF)
dv/dt(2)
Peak diode recovery voltage slope
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width lim...
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