Document
STP13N65M2, STU13N65M2
N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages
Datasheet - production data
Features
TAB
TAB
TO-220
3 2 1
3 2 1
IPAK
Figure 1. Internal schematic diagram
, TAB
Order code
STP13N65M2 STU13N65M2
VDS
RDS(on) max
ID
650 V 0.43Ω
10A
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Order code STP13N65M2 STU13N65M2
AM15572v1
Table 1. Device summary
Marking
Package
13N65M2
TO-220 IPAK
Packaging Tube
December 2014
This is information on a product in full production.
DocID026894 Rev 1
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