N-channel Power MOSFET
STB17N80K5
N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a D²PAK package
Datasheet - production data
T...
Description
STB17N80K5
N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
2 3
1
D²PAK
Figure 1: Internal schematic diagram
Features
Order code STB17N80K5
VDS 800 V
RDS(on) max. 0.34 Ω
ID 14 A
Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STB17N80K5
Table 1: Device summary
Marking
Package
17N80K5
D²PAK
Packing Tape and reel
May 2016
DocID027690 Rev 2
This is information on a product in full production.
1/15
www.st.com
Contents
Contents
STB17N80K5
1 Electrica...
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