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STFU15N80K5

STMicroelectronics

N-channel Power MOSFET

STFU15N80K5 Datasheet N-channel 800 V, 300 mΩ typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package...


STMicroelectronics

STFU15N80K5

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STFU15N80K5 Datasheet N-channel 800 V, 300 mΩ typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package 3 12 TO-220FP ultra narrow leads D(2) G(1) S(3) AM15572v1_no_tab Features Order code VDS RDS(on ) max. ID STFU15N80K5 800 V 375 mΩ 14 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STFU15N80K5 Product summary Order code STFU15N80K5 Marking 15N80K5 Package TO-220FP ultra narrow leads Packing Tube DS10950 - Rev 3 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com STFU15N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) dv/dt (3) Peak diode recovery voltage slope Tstg Storage temperat...




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