STW9N80K5

STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STP9N80K5 STW9N80K5 VDS 800 V RDS(on) max. 0.90 Ω ID 7A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STP9N80K5 STW9N80K5 Table 1: Device summary Marking Package 9N80K5 TO-220 TO-247 Packing Tube July 2016 DocID028461 Rev 3 This is information on a product in full production. 1/16 ...