N-channel Power MOSFET
STFI5N80K5
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a I²PAKFP package
Datasheet - production data
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Description
STFI5N80K5
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a I²PAKFP package
Datasheet - production data
1 23 I 2 PAKFP (TO-281)
Figure 1: Internal schematic diagram
Features
Order code STFI5N80K5
VDS 800 V
RDS(on) max. 1.75 Ω
ID 4A
Fully insulated and low profile package with increased creepage path from pin to heatsink plate
Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STFI5N80K5
Table 1: Device summary
Marking
Package
5N80K5
I²PAKFP
Packing Tube
May 2016
DocID028510 Rev 2
This is informa...
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