STU3N80K5

STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 800 V RDS(on) max. 3.5 Ω ID 2.5 A PTOT 60 W 20 W 60 W  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 Table 1: Device summary Marking Package DPAK 3N80K5 TO-220FP TO-220 IPAK Packing Tape and reel Tube Ju...