Document
STW23N85K5
N-channel 850 V, 0.2 Ω typ., 19 A MDmesh™ K5 Power MOSFET in a TO-247 package
Datasheet - production data
3 2 1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STW23N85K5 850 V 0.275 Ω 19 A 250 W
• Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STW23N85K5
Table 1: Device summary
Marking
Package
23N85K5
TO-247
Packing Tube
August 2015
DocID023547 Rev 3
This is information on a product in full production.
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www.st.com
Contents
Contents
STW23N85K5
1 Electri.