Document
STD40P8F6AG
Automotive-grade P-channel -80 V, 18.5 mΩ typ., -40 A STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code STD40P8F6AG
VDSS -80 V
RDS(on) max. 28 mΩ
ID -40 A
Designed for automotive applications and AEC-Q101 qualified
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(3)
Order code STD40P8F6AG
AM11258v1
Table 1: Device summary
Marking
Package
40P8F6
DPAK
Packing Tape and reel
July 2016
DocID029583 Rev 1
This is information on a product in full production.
1/16
www.st.com
Contents
Contents
STD40P8F6AG
1 Electrical ratings ...................................