P-CHANNEL POWER MOSFET
STN3P6F6
P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package
Datasheet - production data
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Description
STN3P6F6
P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, 4)
G(1)
Features
Order code STN3P6F6
VDS -60 V
RDS(on) max. 0.16 Ω
ID -3 A
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(3)
Int_schem_P_ch_nTnZ_SOT_223
Order code STN3P6F6
Table 1: Device summary
Marking
Package
3P6F6
SOT-223
Packing Tape and reel
October 2016
DocID023758 Rev 5
This is information on a product in full production.
1/13
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Contents
Contents
STN3P6F6
1 Electrical ratings ............................................................................. 3
2 Electrical characteris...
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