STS10P4LLF6

STS10P4LLF6 Datasheet P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) AM01475v4 Features Order code VDS STS10P4LLF6 -40 V Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss RDS(on) max. 15 mΩ ID -10 A Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS10P4LLF6 Product summary Order code STS10P4LLF6 Marking 10P4L Package SO-8 Packing Tape and reel DS10121 - Rev 5 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at Tamb = 25 °C ID Drain current (continuous) at Tamb = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at Tamb = 25 °C Tstg Storage temperature TJ Operating junction temperature 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter RthJA (1) Thermal resistance, junction-to-ambient 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec. STS10P4LLF6 Electrical ratings Value Unit -40 V ±20 V -10 A -5.6 A -40 A 2.7 W -55 to 1...