P-Channel Power MOSFET
STS10P4LLF6
Datasheet
P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package
5 8
4 1 SO-8
D(5, 6...
Description
STS10P4LLF6
Datasheet
P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package
5 8
4 1 SO-8
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM01475v4
Features
Order code
VDS
STS10P4LLF6
-40 V
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
RDS(on) max. 15 mΩ
ID -10 A
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STS10P4LLF6
Product summary
Order code
STS10P4LLF6
Marking
10P4L
Package
SO-8
Packing
Tape and reel
DS10121 - Rev 5 - January 2021 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at Tamb = 25 °C ID
Drain current (continuous) at Tamb = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tamb = 25 °C
Tstg
Storage temperature
TJ
Operating junction temperature
1. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol
Parameter
RthJA (1) Thermal resistance, junction-to-ambient
1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec.
STS10P4LLF6
Electrical ratings
Value
Unit
-40
V
±20
V
-10
A
-5.6
A
-40
A
2.7
W
-55 to 1...
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