STS9P3LLH6

STS9P3LLH6 Datasheet P-channel -30 V, 12 mΩ typ., -9 A, STripFET H6 Power MOSFET in an SO-8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) AM01475v4 Features Order code VDS STS9P3LLH6 -30 V Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss RDS(on) max. ID 15 mΩ -9 A Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS9P3LLH6 Product summary Order code STS9P3LLH6 Marking 9K3L Package SO-8 Packing Tape and reel DS10146 - Rev 3 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at Tamb = 25°C ID(1) Drain current (continuous) at Tamb = 100°C IDM(2) Drain current (pulsed) PTOT(1) Total power dissipation at Tamb = 25°C Tstg Storage temperature range TJ Operating junction temperature range 1. This value is rated according to RthJA. 2. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter RthJA(1) Thermal resistance, junction-to-ambient 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s. STS9P3LLH6 Electrical ratings Value Unit -30 V...