P-CHANNEL POWER MOSFET
STD26P3LLH6
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package
Datasheet - produ...
Description
STD26P3LLH6
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package
Datasheet - production data
Features
TAB 23 1
DPAK
Figure 1. Internal schematic diagram D(2 or TAB)
G(1)
Order code
VDSS
RDS(on) max
ID
STD26P3LLH6 30 V 0.030 Ω(1) 12 A
1. @ VGS= 10 V
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate input resistance
PTOT 40 W
Applications
Switching applications LCC converters, resonant converters
Description
This device is a P-channel Power MOSFET
th
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages
S(3)
AM11258v1
Order code STD26P3LLH6
Table 1. Device summary
Marking
Package
26P3LLH6
DPAK
Packaging Tape and reel
Note:
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
February ...
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