STT3P2UH7

STT3P2UH7 P-channel 20 V, 0.087 Ω typ., 3 A STripFET™ H7 Power MOSFET in a SOT23-6L package Datasheet - production data SOT23-6L Figure 1: Internal schematic diagram Features Order code STT3P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 ID 3A  Very low on-resistance  Very low capacitance and gate charge  High avalanche ruggedness Applications  Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Order code STT3P2UH7 Table 1: Device summary Marking Package 3L2U SOT23-6L Packaging Tape and reel For the P-channel Power MOSFET, current and voltage polarities are reversed. September 2016 DocID025027 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents Contents STT3P2UH7 1 Electrical ratings ........................................