STP160N4LF6

STP160N4LF6 N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data TAB TO-220 3 2 1 Features Order code VDS RDS(on) max ID PTOT STP160N4LF6 40 V 0.0029 Ω 120 A 150 W RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Logic level drive High avalanche ruggedness 100% avalanche tested Figure 1. Internal schematic diagram 'Ć7$% * Applications Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STP160N4LF6 Table 1. Device summary Marking Package 160N4LF6 TO-220 Packaging Tube April 2014 This is information on a product in full production. DocID026266 Rev 1 1/14 www.st.com Contents Contents STP160N4LF6 1 Electrical ratings . . ....