NTMFS4C024N

MOSFET - Power, Single N-Channel, SO-8FL 30 V, 78 A NTMFS4C024N Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C TA = 80°C TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC =80°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 20 V, IL = 41 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) VDSS VGS ID PD ID PD ID PD ID PD IDM IDmax TJ, TSTG IS dV/dt EAS TL 30 V ±20 V 21.7 A 16.3 2.57 W 34.8 A 26.0 6.6 W 11.9 A 8.9 0.77 W 78 A 58 33 W 174 80 −55 to +150 30 7.0 84 A A °C A V/ns m...